data sheet third angle protection m 420 +/- 20 symbol cathode anode solderable surface ti/ni/ag cathode dimensions in mils (mm) (2) the characteristics above assume the die are assembled in indusry standard packages using appropriate attach methods. mechanical dimensions wafer die scd0905-1 page 1 of 1 transys electronics ltd birmingham uk. email: sales@transyselectronics.com website: www.transyselectronics.com tel: + 44 (0) 121 776 6321 fax: + 44 (0) 121 776 6997 the information in this datasheet does not form part of any contract, quotation guarantee,warranty or representation, it has been produced in good faith and is believed to be accurate and may be changed without notice at anytime. liability will not be accepted by transys electronics ltd for any consequences whatsoever in its use. this publication does not convey nor imply any license under patent or other intellectual/industrial property rights. the products within this specification are not designed for use in any life support apparatus whatsoever where malfunction can be reasonably expected to cause personal injury or death. customers using these products in the aforementioned applications do so at their own risk and agree to fully indemnify transys electronics ltd for any damage/ legal fees either direct, incidental or consequential from this improper use or sale. SB090P200-W-AG/al schottky barrier diode wafer 90 mils, 20 0 volt, 8 amp 200 v rrm maximum repetitive reverse voltage (2) electrical characteristics @ 25 reverse leakage current (2) i r c volt 10 storage temperature range (2) t j -65 to +150 c SB090P200-W-AG/al (see ordering code below) i f(av) 8 typical average forward rectified current (2) a junction operating temperature range (2) t sg -65 to +150 maximum forward voltage (1)(2) v f volt 0.85 amp symbol unit reverse leakage current @ 125 c (2) i r ma c (1) pulse width tp = < 300s, duty cycle <2% 90.0 (2.28) 82.6 (2.1) 1. solderable surface ti/ni/ag - suffix "ag" 2. wire bond surface aluminium - suffix "al" wafer diameter - 100 mm (4") wafer thickness 420 +/- 20 top (anode) - ti/ni/ag (suffix "ag") or aluminium (suffix "al") bottom (cathode) ti/ni/ag 82.6 (2.1) 90.0 (2.28) features oxide passivated junction low forward voltage 150 o c junction operating low reverse leakage supplied as wafers platinum barrier schottky barrier 40 mils pt barrier 150 volt wafer ti/ni/ag ordering code sb040p150-w-ag 5
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